inchange semiconductor isc product specification isc silicon pnp power transistor BD330 description dc current gain- : h fe = 85~375(min)@ i c = -0.5a collector-emitter sustaining voltage - : v ceo(sus) = -20v(min) complement to type bd329 applications especially for battery equipped applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -32 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a i bm base current-peak -1 a p c collector power dissipation @ t c =25 15 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 7 /w r th j-a thermal resistance,junction to ambient 100 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BD330 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = -30ma; i b = 0 -20 v v ce( sat ) collector-emitter saturation voltage i c = -2a; i b = -0.2a b -0.5 v v be( on )-1 base-emitter on voltage i c = -5ma; v ce = -10v -0.6 v v be( on )-2 base-emitter on voltage i c = -2a; v ce = -1v -1.2 v i cbo collector cutoff current v cb = -32v; i e = 0 v cb = -32v; i e = 0,t c =150 -0.1 -10 a i ebo emitter cutoff current v eb = -5v; i c = 0 -0.1 a h fe-1 dc current gain i c = -5ma; v ce = -10v 50 h fe-2 dc current gain i c = -0.5a; v ce = -1v 85 375 h fe-3 dc current gain i c = -2a; v ce = -1v 40 f t current-gain?bandwidth product i c = -50ma;v ce = -5v; f test = 100mhz 100 mhz isc website www.iscsemi.cn 2
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